发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to improve a data transfer rate corresponding to each bank by reducing loading of a global input/output line. CONSTITUTION: First and second banks(410_1,410_2) are stacked in a first direction. A plurality of first local data lines(L101) transfers input/output data of the first bank. The first local data line is arranged across the second bank. A second local data line(L102) transfers input/output data of the second bank. A global data line is arranged in a second direction orthogonal to the first direction. A data exchange unit is arranged between the second bank and the global data line. The data exchange unit controls data exchange between the first and second local data lines and the global data line.
申请公布号 KR100929826(B1) 申请公布日期 2009.12.07
申请号 KR20080052770 申请日期 2008.06.04
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, DONG KEUN;LEE, JEE EUN
分类号 G11C11/4093;G11C7/10;G11C8/12;G11C11/4096 主分类号 G11C11/4093
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