TRANSISTOR STRUCTURE AND THE METHOD FOR MANUFACTURING THE SAME

摘要

The MOS transistor has a gate electrode(42) comprising a p-type conductor and n-type conductors forming each junction region at the side of the first, the second direction of the first conductor. The method of manufacturing the MOS transistor comprises the steps of : forming epilayers of a gate insulating layer(40) and the gate electrode(40); injecting p-type ion after forming a photoresist pattern(28); and injecting n-type ion after forming a photoresist pattern(30).