| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce manufacturing cost and to prevent degradation of device characteristics, by forming a gate insulator with high permittivity including nitrogen by using a conventional furnace equipment. CONSTITUTION: A first oxide layer(101) is formed by thermal oxidation of the surface of a semiconductor substrate(100). A first nitride layer(102) is deposited on the first oxide layer. A second oxide layer(103) is deposited on the first nitride layer. A second nitride layer(104) is deposited on the second oxide layer. A gate insulator(110) is formed by depositing a third oxide layer(105) on the second nitride layer. A polysilicon layer is formed on the gate insulator.</p> |
