THE RESISTANCE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING

摘要

PURPOSE: An RRAM(Resistance Random Access Memory) and a method for manufacturing the same are provided to manufacture a bending resistance random access memory, by using a plastic substrate of all materials without temperature restriction. CONSTITUTION: A first conductive layer(100) is deposited on a substrate(130). A resistance material layer(110) is formed on the first conductive layer. A second conductive layer(120) is deposited on the resistance material layer. The resistance material layer is formed by performing oxygen plasma treatment of the first conductive layer at a predetermined temperature. The substrate is a bendable plastic substrate. The predetermined temperature is a low temperature below 50 degree.