| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to remove residue of a photoresist pattern on a substrate completely, by removing the residue of the ashing and wet cleaning process of the photoresist pattern hardened by highly doped ion implantation process at the same time when a nitride film is wet-etched. CONSTITUTION: A gate pattern and an epitaxial layer(120) are formed on a semiconductor substrate(110). A spacer is formed in the sidewall of the gate pattern. A nitride film is formed in the front of the semiconductor substrate where the gate pattern is formed. A photoresist pattern to form a source and a drain is formed on the nitride film. A source and a drain(160) are formed on the semiconductor substrate at both sides of the gate pattern by implanting impurity ions using the photoresist pattern as an ion implantation mask. The photoresist pattern is removed by performing the ashing and wet cleaning process.
|
