| 摘要 |
A method for forming a semiconductor device (10) is provided. The method includes forming a gate structure (22) overlying a substrate (12). The method further includes forming a sidewall spacer (24) adjacent to the gate structure (22). The method further includes performing an angled implant (26) in a direction of a source side of the semiconductor device (10). The method further includes annealing the semiconductor device (10). The method further includes forming recesses (32, 34) adjacent opposite ends of the sidewall spacer (24) in the substrate to expose a first type of semiconductor material (16). The method further includes epitaxially growing a second type of semiconductor material (36, 38) in the recesses, wherein the second type of semiconductor material has a lattice constant different from a lattice constant of the first type of semiconductor material to create stress in a channel region of the semiconductor device (10). |
