METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE USING SPACER

摘要

PURPOSE: A method for forming a pattern of a semiconductor device using a spacer is provided to perform deposition of an amorphous carbon and a SiON film well, by making a slope of an etched plane of a polysilicon layer on an overlay vernier. CONSTITUTION: An opaque first hard mask(210) is formed on an etching object film formed on a substrate. The first hard mask on an overlay vernier area is etched to have a sloped etched plane by using an etching gas generating a polymer. A second hard mask formed with an amorphous carbon film is formed. An anti reflection layer(220) is formed on the second hard mask. A photoresist pattern is formed on the anti reflection layer. An amorphous carbon film(240) and a SiON film(250) are formed in sequence, after removing the photoresist pattern.