| 摘要 |
<p>#CMT# #/CMT# The device (100) has metal silicide based interface portions (119), and a rectangular silicon based element (104) placed on a dielectric layer (102). Each one of opposite faces of the silicon based element is completely covered by one of interface portions. The opposite faces are perpendicular to a face that is in contact with the dielectric layer. A surface of faces of the silicon element is equal to product of thickness and contact width of the silicon based element. Each portion is connected to metallic contacts (118) made of titanium or tungsten nitride. #CMT# : #/CMT# An independent claim is also included for a method for forming a resistivity measuring device. #CMT#USE : #/CMT# Device for measuring resistivity of an interface between semi-conductor e.g. silicon, germanium or silicon-germanium, and metal e.g. platinum, nickel, titanium or erbium (all claimed), in a complementary MOS transistor for characterizing electrical parameters of materials of the transistor and optimizing the transistor by selection of the materials. #CMT#ADVANTAGE : #/CMT# The configuration of the measuring device precisely measures resistivity of the interface based on crystalline orientation of the semiconductor. The device is adapted to geometries of the transistor with metallic source and drain zones, and permits measurement of resistivity of a vertical interface. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view illustrating a step of a method for forming a resistivity measuring device. 100 : Resistivity measuring device 102 : Dielectric layer 104 : Silicon base element 108 : Mask layer 110 : Active zone 114 : Oxide layer 118 : Metallic contacts 119 : Interface portions.</p> |
