Pixel matrix fabricating method for charge-coupled device image sensor, involves opening implantation mask to denude gap between two bands, implanting impurity to form anti-glare drain in gap, and removing implantation mask

摘要

The method involves depositing an implantation mask protecting a gap between two bands and releases a gap between another two bands. An insulation impurity is implanted between pixel columns in a doped silicon surface. The former bands are protected, and the later bands are removed. A polycrystalline silicon layer is removed, while conserving anti-glare gates (GAE) extended along the columns below the former bands. Another implantation mask is deposited and opened to denude the former gap. An impurity is implanted to form an anti-glare drain (DAE) in the former gap. The latter mask is removed.