| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an effective method of obtaining a surface of high quality by removing a layer deteriorated by processing from the surface of a silicon carbide single crystal wafer which has been rough-lapped for chemical stability, and then finish polishing. <P>SOLUTION: The polishing method efficiently provides a surface of high quality with no deteriorated layer by processing that occurs after diamond mechanical polishing, by oxidizing the surface of silicon carbide single crystal wafer that has been rough-lapped in diamond mechanical polishing, and then removing an oxide film on the surface by finish polishing. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
