发明名称 |
Exposure mask and exposure method using the same |
摘要 |
A divided exposure method for a photolithography process is disclosed, which uses a mask. The mask for an exposer having a left and right light intensity deviation includes a substrate; a first pattern in a middle of the substrate; and second and third patterns on left and right sides of the first pattern, respectively, wherein the first and second patterns compensate for the left and right light intensity deviation of the exposer.
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申请公布号 |
US2009297958(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090461339 |
申请日期 |
2009.08.07 |
申请人 |
LEE SU WOONG;PAIK SANG YOON |
发明人 |
LEE SU WOONG;PAIK SANG YOON |
分类号 |
G03F1/00;G02F1/133;G03B27/42;G03C5/00;G03F1/14;G03F7/20;G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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