发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME |
摘要 |
Disclosed is a program method of a non-volatile memory device. The program method includes performing a least significant bit (LSB) program operation, during which an LSB program number is stored, and performing a most significant bit (MSB) program operation in a threshold voltage state order determined according to the LSB program number.
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申请公布号 |
US2009296467(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090472636 |
申请日期 |
2009.05.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUNG-GON;LEE SUNG-SOO |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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