| 摘要 |
<p>PURPOSE: A method manufacturing of flash memory device is provided to pass the electric charge through the center region by forming thick thickness of the edge. CONSTITUTION: The tunnel oxide film, the floating gate, and the oxide-nitride-oxide film and control gate are formed successively on the semiconductor substrate(10) to form the line pattern. The first sacrificial oxide is formed in the line pattern. The first sacrificial oxide is removed. The second sacrificial oxide(22) is formed in the line pattern. The first and the second sacrificial oxide are formed by the RTP(rapid thermal process) process. The first and the second sacrificial oxide are formed with 40~60Å.</p> |
