| 摘要 |
PROBLEM TO BE SOLVED: To provide a film which has a high nitride content and is usable as an insulating film for a gas barrier and a semiconductor by forming a carbon nitride film using a compound suitable to a PECVD device as a raw material. SOLUTION: The compound expressed by general formula (1) (where R<SP>1</SP>, R<SP>2</SP>, R<SP>3</SP>, R<SP>4</SP>, R<SP>5</SP>and R<SP>6</SP>represent a hydrogen atom or a hydrocarbon group with 1-20C, and may be bonded to one another, and (m) and (n) represent an integer of 0-20) is used as the raw material, and the carbon nitride containing film is manufactured by a plasma excited chemical vapor deposition method and used to manufacture a gas barrier film and a semiconductor device. COPYRIGHT: (C)2010,JPO&INPIT
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