| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of reducing crystal defects in a diffusion layer and further reducing the chip size by reducing the dead area. SOLUTION: The manufacturing method of the semiconductor device comprises: a trench formation process for forming a trench 5 in a base material 1 made of silicon; a buffer layer formation process for forming a buffer layer 6 which relaxes the stresses on the inner surface in the trench 5, by implanting ions of an electrically inactive element to silicon for making an amorphous form; an insulator filling process for filling an insulator 7 in the trench 5, in which the buffer layer 6 is formed; an impurity injection process for injecting impurities into regions P, N separated by the insulator 7 of the base material 1; and a heat-treatment process for making injected impurities diffuse thermally by heat-treating the base material 1. COPYRIGHT: (C)2010,JPO&INPIT
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