| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing the generation of particles by removing a film formed at the edge of a semiconductor wafer. Ž<P>SOLUTION: This method of manufacturing a semiconductor device comprises a step of forming a film at the edge 10a of the semiconductor wafer by forming a film on the surface of the semiconductor wafer 10 by a thermal oxidation method or a CVD method and a step of polishing and removing the film formed at the edge section by spraying a polishing material 12 to the edge section of the semiconductor wafer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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