SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor laser which allows high-speed modulation of ≥10 Gbps. SOLUTION: Ridge structure 18 is formed, on which a p type InP clad layer 12 (p type clad layer), an AlGaInAs distortion quantum well active layer 14 (active layer) and an n type InP clad layer 16 (n type clad layer) are laminated. Both sides of the ridge structure 18 are embedded in an embedding layer 20. The embedding layer 20 includes a low carrier concentration p type InP layer 26 (p type semiconductor layer) and an n type InP layer 24 (n type semiconductor layer) constituting pn junction 30. The carrier concentration near the pn junction of the low carrier concentration p type InP layer 26 is equal to or less than 5×1017cm-3. COPYRIGHT: (C)2010,JPO&INPIT