ATOMIC EMISSION SPECTROSCOPY ON A CHIP

摘要

A method of inducing explosive atomization of materials is provided using a metal-oxide-semiconductor (MOS)-based structure under electrical excitation. Explosive atomization of the gate electrode and surrounding dielectric materials creates a microplasma that is substantially confined with the device at the metal/dielectric interface. The device can generate a microplasma in either the accumulation or inversion regime. The high degree of confinement of the microplasma allows chip-scale implementation of atomic emission spectroscopy and detection using a minimal amount of analyte.