| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of improving the reliability of a semiconductor device without superfluously exposing the semiconductor substrate. Ž<P>SOLUTION: After a gate electrode G1 and a gate electrode G2 are formed on a semiconductor substrate 1S, a p-channel type MISFET formation area is exposed while an n-channel type MISFET formation area is covered with a silicon oxide film. Next, an element supply film 7 comprising, for example, an aluminum oxide film is formed all over a surface of the semiconductor substrate 1S and then heat treatment is performed, whereby aluminum is dispersed in a first insulating film just under the gate electrode G2 to form a high-concentration HfAlO film 8a and a low-concentration HfAlO film 8b. Thereafter, magnesium is dispersed in the first insulating film just under the gate electrode G1 by using, for example, a magnesium oxide film as an element supply film, to form a high-concentration HfMgO film and a low-concentration HfMgO film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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