发明名称 |
FABRICATION PROCESS FOR A THICK FILM BY MAGNETRON SPUTTERING |
摘要 |
Disclosed is a fabrication process for a thick film by magnetron sputtering. The thick film fabrication process comprises: forming, over a substrate, a first thin film having a compressive residual stress using a magnetron sputtering method; forming, over the first thin film, a second thin film having a tensile residual stress using a magnetron sputtering method; repeating the deposition of the first and second thin films at least once to deposit a thin film having an overall residual stress controlled within a predetermined range. With this fabrication process for a thick film, the overall stress of a thick film can be controlled to fall within an allowable range, and a thick film can be made of a homogenous substance as well as heterogeneous substances.
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申请公布号 |
WO2009145492(A2) |
申请公布日期 |
2009.12.03 |
申请号 |
WO2009KR01730 |
申请日期 |
2009.04.03 |
申请人 |
KI-XIMAX CO.,LTD.;KIM, KAB-SEOG;KIM, YONG-MO |
发明人 |
KIM, KAB-SEOG;KIM, YONG-MO |
分类号 |
C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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