| 摘要 |
PURPOSE: An apparatus for high density plasma chemical vapor deposition is provided to uniformly distribute the process gas of the plasma state in the semiconductor substrate. CONSTITUTION: The processing chamber(100) comprises the chamber body and chamber cover. The substrate support portion is arranged within the processing chamber. And the semiconductor substrate(10) is placed. The first gate hole(130) carries in the semiconductor substrate into the process inside of chamber. The first gate hole the second gate hole(140) is formed. A plurality of gas supplying nozzles(400) supplies the process gas to the inside of the processing chamber. The plasma generation part(500) excites the process gas sprayed to the processing chamber to the plasma state.
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