| 摘要 |
PURPOSE: A semiconductor device having a PGS and a manufacturing method thereof are provided to minimize effects of eddy currents by adjusting a slope of one PGS(Patterned Ground Shield) line passing by two inductor lines and compensate an SRF(Self Resonance Frequency). CONSTITUTION: A semiconductor substrate(5) is prepared. A patterned ground shield(10A) having a pattern keeping a constant angle and flow of currents induced in an inductor(20A) is formed on the semiconductor substrate. The inductor of a spiral shape is formed in an upper part of the patterned ground shield. The patterned ground shield is formed in an upper part of an inactive region. An element isolation film is formed in the inactive region. An intermetallic dielectric(7) is formed in an upper part of the patterned ground shield.
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