| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pellicle comprising a pellicle film for EUV having high transmissivity, excellent mechanical and chemical stability, and eliminating warpage or distortion, and having high yield, and being practical in cost. <P>SOLUTION: An SOI (silicon on insulator) substrate is used and the pellicle film 11 comprising a silicon single crystal film and a base substrate 12 supporting the pellicle film 11 are formed of a single substrate. The base substrate 12 is provided with an opening part whose ratio (an open area ratio) in area to an exposure region is ≥60% when the pellicle is used on the photomask and is provided with a reinforcing frame 12a in a non-exposure region of the base substrate. Since the pellicle film 11 and base substrate 12 supporting the pellicle film 12 are formed of the single substrate (an integrated structure) and the base substrate is provided with the reinforcing frame, the effect of increased strength is obtained. The principal plane of the silicon single crystal film 11 is formed into an inclined crystal plane inclined at 3-5° from any lattice plane belonging to ä100} plane group and ä111} plane group. <P>COPYRIGHT: (C)2010,JPO&INPIT |
