| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which allows a three-dimensional shape of a pattern to be precisely measured under an atmospheric pressure with a high throughput without destruction neither contacting and is precisely controlled with respect to shape, dimensions and a manufacturing method thereof. <P>SOLUTION: The manufacturing method of a semiconductor device includes a processing process 181 of forming a test pattern in a plurality of test areas within a chip formation area 102 and a test process, wherein the test pattern includes a repeated pattern 112 formed in a first test area 103a and a uniform pattern 113 formed in a second test area 103b. The test process includes at least a pattern test step including a first test of measuring parameters of the repeated pattern 112 in the first test area 103a by using an optical measurement method capable of measuring three-dimensional pattern shapes and a second test of measuring a film thickness of the uniform pattern 113 in the second test area 103b by using an optical measurement method capable of measuring film thicknesses of films. <P>COPYRIGHT: (C)2010,JPO&INPIT |
