DETECTION APPARATUS, LIGHT-RECEIVING ELEMENT ARRAY, AND FABRICATION PROCESS THEREFOR

摘要

<P>PROBLEM TO BE SOLVED: To provide an InGaAs light-receiving element array which has photosensitivity in a wavelength region exceeding 1.7 μm, and a low dark current, and to provide its fabrication process and a detection apparatus using the InGaAs light-receiving element array. Ž<P>SOLUTION: A light-receiving element array comprises: an InGaAs light-receiving layer 3 having In composition exceeding 0.53; an InAsP window layer 4, located in contact with the InGaAs light-receiving layer and having a p-type total thickness portion or a thickness portion on the reverse side of a substrate; and an n-type isolation region 19 extending from the p-type InAsP window layer to reach the inside of the InGaAs light-receiving layer and formed by introducing n-type impurities to surround the light-receiving region of the light-receiving element. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž