| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for evaluating the degree of internal contamination of a single crystal manufacturing apparatus by which a heat shielding member is not broken and a grown silicon single crystal is not used. Ž<P>SOLUTION: A sample 14 for evaluation of life time is mounted on the heat sealing member 8 of the single crystal manufacturing apparatus, and the sample 14 for evaluation is held for a predetermined time in a state in which a silicon melt 3 is accommodated in a quartz crucible 1. Thereafter, the life time is measured for the sample 14 for evaluation to evaluate the degree of internal contamination of the single crystal manufacturing apparatus. The sample 14 for evaluation is mounted on a flange-like mounting part 8c provided on a cone part 8a of a heat shielding member 8. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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