| 摘要 |
A microelectronic device comprising: a substrate surmounted by a stack of layers, at least one first transistor situated at a given level of said stack, at least one second transistor situated at a second level of said stack, above said given level, the first transistor comprising a gate electrode situated opposite a channel zone of the second transistor, the first transistor and the second transistor being separated by means of an insulating zone, said insulating zone having, in a first region between said gate of said first transistor and said channel of said second transistor, a composition and thickness provided so as to enable a coupling between the gate electrode of the first transistor and the channel of the second transistor, said insulating zone comprising a second region around the first region, between the access zones of the first and the second transistor of thickness and composition different to those of said first region.
|
