Method of Correcting Etch and Lithographic Processes

摘要

System and method of correcting etch and lithographic processes on a photo mask provides for performing an etch proximity correction on a layout design pattern. A first and a second intermediate layout pattern each being based on the etch proximity corrected layout design pattern are provided. An optical proximity correction on the first intermediate layout pattern is performed so as to generate a modified first intermediate layout pattern. Scatterbar generation on the second intermediate layout pattern is performed so as to generate a modified second intermediate layout pattern including scatterbars. Generating a mask layout pattern being based on the first and the second modified intermediate layout pattern is performed.