| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production process of a semiconductor device easy to handle and having little level difference, and moreover, is suited for microfabrication. <P>SOLUTION: A semiconductor layer 2 is grown on a GaAs substrate 1 and the semiconductor layer 2 is stuck to a transparent support 4 by means of a heat-resisting ultraviolet-light peeling tape 5. After a resist layer 6 is formed via the heat-resisting ultraviolet light peeling tape 5, the GaAs substrate 1 is removed (peeled off) from the semiconductor layer 2 by the wet etching method, in a state with the substrate 1 stuck to the support. <P>COPYRIGHT: (C)2010,JPO&INPIT |
