发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, PHOTOSENSITIVE-RESIN COMPOSITION AND ELECTRONIC COMPONENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device that does not generate etching residues, when an inorganic insulating film coated with an organic insulating film is etched and suppressing the corrosion of copper and a copper alloy such as a metallic wiring, a metallic layer, or the like, to provide a manufacturing method for the semiconductor device, and to provide a photosensitive-resin composition and an electronic component. <P>SOLUTION: The semiconductor device has a semiconductor substrate 1 forming a pad electrode 2, the inorganic insulating film 3 formed on at least the pad electrode 2 and the first organic insulating film 4 formed on the inorganic insulating film 3. The first organic insulating film 4 is formed of a resin composition, containing a polyimide resin that does not contain fluorine in a resin structure, a heterocyclic compound and at least one compound selected from the compounds, having thioureas and a mercapto group. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009283711(A) 申请公布日期 2009.12.03
申请号 JP20080134628 申请日期 2008.05.22
申请人 HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD 发明人 IWASHITA KENICHI
分类号 H01L21/312;C08G73/10;C08G73/22;G03F7/004;G03F7/023;G03F7/40;H01L21/027;H01L21/3205;H01L21/768;H01L23/52;H01L23/522 主分类号 H01L21/312
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