| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nanocrystal embedded silicon oxide EL device, and to provide a manufacturing method thereof. SOLUTION: The manufacturing method of the EL device includes formation of a substrate bottom electrode, and formation of a plurality of silicon nanocrystal embedded silicon oxide layers (SiOx film layer: x is larger than 0 and less than 2) on the substrate bottom electrode. Each silicon nanocrystal embedded SiOx film has a silicon excess concentration of about 5-30%. Of the silicon nanocrystal embedded SiOx film layers, the outside film layers sandwich an inner film layer having a lower concentration of Si nanocrystal. Alternately stated, the outside layers have a higher electrical conductivity than the inner film layer sandwiched by the outside layers. A transparent top electrode is formed over the plurality of silicon-embedded SiOx film layers. The plurality of silicon nanocrystal embedded SiOx film layers are deposited using a high density plasma-enhanced chemical vapor deposition (HD PECVD) process. The HD PECVD process initially deposits SiOx film layers, which are subsequently annealed. COPYRIGHT: (C)2010,JPO&INPIT
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