FIELD-ENHANCED PROGRAMMABLE RESISTANCE MEMORY CELL

摘要

A method for fabricating a field-enhanced programmable resistance memory cell. In an example embodiment, a resistor includes a resistance structure between a first electrode and a second electrode. The resistance structure includes an insulating dielectric material. The second electrode includes a protrusion extending into the resistance structure. The insulating dielectric material includes a material in which a confined conductive region with a programmable resistance is formable via a conditioning signal.