METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device can form an ohmic electrode by a low-temperature process without using an ion implantation process. SOLUTION: An element structure and a surface electrode are formed on the front surface side of an n+type substrate 1, and thereafter a polishing process is executed to the back face 1b of the n+type substrate 1 to form minute irregularity on the back face 1b. A metal thin film 110 is formed on the back face 1b with the irregularity formed thereon, and thereafter a drain electrode 11 including a silicide layer 111 is formed by irradiating the back face 1b side of the n+type substrate 1 with laser light in a condition where the product of photon energy and laser output is set to 1,000-8,000 eV mJ/cm2. Thereby, the silicide layer 111 can be created in the drain electrode 11 on the n+type substrate 1 without executing a high-temperature process to the n+type substrate 1. Accordingly, the drain electrode 11 can be formed into an ohmic electrode by a low-temperature process without using an ion implantation process. COPYRIGHT: (C)2010,JPO&INPIT