发明名称 VOLTAGE BOOST CIRCUIT WITHOUT DEVICE OVERSTRESS
摘要 <p>A voltage boost circuit is driven with a clock signal CLK which toggles between voltages V1 and V2. A first MOSFET is coupled between CLK and an output node OUT, and at least one additional MOSFET is coupled between OUT and a supply voltage. The first terminal of a capacitance is coupled at its first terminal to OUT, and at its second terminal to a delay circuit arranged to toggle its output to ~V2 or ~V1 a predetermined amount of time after the voltage applied to the clock signal side of the first MOSFET toggles to ~V2 or ~V1, respectively. The capacitance is charged to ~V2 when the voltage applied to the clock signal side of the first MOSFET toggles to ~V2, and OUT is increased to a voltage greater than V2 when the output of the delay circuit toggles to ~V2. The only active device junctions subjected to the boosted voltage are MOSFET well-substrate junctions, such that no active devices are overstressed.</p>
申请公布号 WO2009145872(A1) 申请公布日期 2009.12.03
申请号 WO2009US03026 申请日期 2009.05.14
申请人 ANALOG DEVICES, INC.;DOUTS, BENJAMIN, A.;WAN, QUAN 发明人 DOUTS, BENJAMIN, A.;WAN, QUAN
分类号 G11C5/14;H02M3/07 主分类号 G11C5/14
代理机构 代理人
主权项
地址
您可能感兴趣的专利