| 摘要 |
PURPOSE: A data read method of a non-volatile memory device is provided to reduce the whole operation time by reducing discharge and pre-charge time of a pump. CONSTITUTION: A data read command, address information of a memory cell for reading data, and an execution command are inputted(S201-S205). A controller generates operating voltage for performing the read command(S207). A bit line and a word line are pre-charged(S209). According to a voltage level of a sensing node, data of a first page is latched to a first latch of a first latch unit(S211). Voltages of the pre-charged bit and word lines are discharged(S213). The bit and word lines are pre-charged(S215). Data of a second page is latched to a second latch of a second latch unit(S217). The bit and word lines are discharged(S219). The bit and word lines are pre-charged(S221). Data of a third page is latched to a third latch of a third latch unit(S225). Data is read out(S227).
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