| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for metal and a polishing method using the same, capable of controlling the generation of a localized corrosion on the surface of a conductive film and rapidly polishing the conductive film, and further improving the flatness of the polished plane with low dishing. <P>SOLUTION: The polishing solution for metal including (a) a non-ionic surface active agent having a hydrocarbon group having an aromatic group at one end of an alkyleneoxy chain and a hydroxyl group at the other end, (b) an anti-corrosive agent for metal, (c) an oxidative agent, (d) an organic acid and (e) abrasive grains is used for chemically or mechanically polishing the conductive film mainly made of copper or a copper alloy in the method of manufacturing a semiconductor device. Preferably, the (b) anti-corrosive agent is a tetrazole or a derivative thereof. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
