| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method for preventing the generation of charging damage due to electronic shading, and forming a desired contact hole with a high aspect ratio. Ž<P>SOLUTION: A wafer W is placed on a second electrode 106 which is arranged in the processing chamber 102 of an etching device 100, and then, processing gas including C<SB>4</SB>F<SB>8</SB>, CO, Ar is introduced to the processing chamber 102. Two kinds of high frequency power are applied to the second electrodes 106. One high frequency power to be applied to the second electrode 106 is the pulse shape power for repeating ON/OFF by prescribed period. The other high frequency power is lower in frequency than one high frequency power. The intermittent addition of O<SB>2</SB>is performed to the processing gas. The non-addition time of O<SB>2</SB>is longer than the addition time of O<SB>2</SB>. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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