| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser which is free of deterioration due to end surface optical damage, even at a high light-output operation, by simultaneously forming an active layer structure having a short wavelength for the transition wavelength into a light-emitting end surface. Ž<P>SOLUTION: An uneven structure is provided on a base substrate, and a layer structure of the nitride semiconductor laser is fabricated thereupon. InGaN used for the active layer varies significantly in In introduction efficiency and growing speed with respect to a planar direction. The characteristics of the variation are used to form an active layer structure, having a low In composition and a thin well layer thickness on the light emitting end surface through one-time crystal growth, so that the active layer transition wavelength near the light-emitting end surface is made short. Consequently, optical damages due to light absorption of the light-emitting end surface is reduced significantly, to achieve the nitride semiconductor laser which can perform the high light-output operation. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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