| 发明名称 |
HIGH EFFICIENCY SKUTTERUDITE TYPE THERMOELECTRIC MATERIALS AND DEVICES |
| 摘要 |
One exemplary embodiment includes a materials and devices comprising a multi-element filled skutterudite type body-centered cubic crystal structure including GyM4X12, wherein G is at least two elements. The material may include n-type or p-type doping.
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| 申请公布号 |
US2009293930(A1) |
申请公布日期 |
2009.12.03 |
| 申请号 |
US20090396875 |
申请日期 |
2009.03.03 |
| 申请人 |
GM GLOBAL TECHNOLOGY OPERATIONS, INC.@@SHANGHAI INSTITUTE OF CERAMICS,;CHINESE ACADEMY OF SCIENCES@@THE REGENTS OF THE UNIVERSITY OF MICHIGAN |
发明人 |
YANG JIHUI;CHEN LIDONG;ZHANG WENQING;BAI SHENGQIANG;SHI XUN;UHER CTIRAD |
| 分类号 |
H01L35/12 |
主分类号 |
H01L35/12 |
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