| 摘要 |
<p>Disclosed are methods and devices, among which is a method that includes forming a lower conductive material (206) on a substrate (110), forming a stop material (202) on the substrate (110), forming a sacrificial material (210) on the substrate (110), etching the sacrificial material (210) with an etch that is selective to the sacrificial material (210) and selective against the stop material (202), and etching the lower conductive material (206).</p> |
