| 摘要 |
PURPOSE: A CMOS Image sensor and Method for fabricating of the same are provided to control the radius of the micro lens island and eliminate the lens bridge using the multilayer structure. CONSTITUTION: A plurality of photo diodes is formed on the semiconductor substrate(10). The interlayer dielectric layer(20) is formed in the semiconductor substrate. The protective film(30) is formed in order to protect device on the interlayer dielectric layer. With keeping the regular interval the first color filter(40a) is formed on the protective film. The first overcoat layer(50a) is formed in the protective film including the first color filter. The second and the third color filter are formed on the first overcoat layer formed between the first color filters.
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