| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a fine pattern having a good figure while preventing influences on a resist film by a nonaqueous liquid, used in high-index immersion lithography. <P>SOLUTION: After the resist film 102 is formed on a substrate 101, a barrier film 103 containing a polymer having a sulfonyl group in the main chain, for example, polybutene sulfone is formed on the formed resist film 102. Subsequently, while a nonaqueous liquid such as hexane is disposed on the barrier film 103, the resist film 102 is selectively irradiated with exposure light through the barrier film 103 to carry out pattern exposure. Subsequently, the barrier film is removed and then, the resist film 102 is developed to form a resist pattern 102a out of the resist film 102. <P>COPYRIGHT: (C)2010,JPO&INPIT |
