| 摘要 |
PROBLEM TO BE SOLVED: To measure the charge-up state on an actual pattern in real time. SOLUTION: A sensor 50 is attached onto a surface of a wafer, and the wafer with the sensor 50 is mounted on a stage in a plasma chamber. The wafer is exposed to a plasma 35 generated in the plasma chamber through application of an RF bias. When the wafer is exposed to the plasma 35, charge-up is generated in contact holes 57 in the sensor 50 due to an electron screening effect. Consequently, different voltages are generated at an upper electrode 56, an intermediate electrode 55, and a lower electrode 53. At this time, the voltages at the upper electrode 56, the intermediate electrode 55, and the lower electrode 53 are measured by voltmeters 62, 65, and 68 respectively through resistor elements 61, 64, and 67 respectively, and the potential differences between the upper electrode 56, the intermediate electrode 55, and the lower electrode 53 are determined for monitoring. COPYRIGHT: (C)2010,JPO&INPIT
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