METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a pattern is stably formed with high precision. SOLUTION: A first inorganic film HU which consists of a first inorganic material, and a second inorganic film HD which consists of a second inorganic material and is located between the first inorganic film HU and a film PS to be processed are formed on the film PS to be processed. The first inorganic film HU is etched using a first photoresist mask R1 on the first inorganic film HU as a mask. A second photoresist mask R2 is formed on the second inorganic film HD. The second inorganic film HD is etched using the second photoresist mask R2 and the first inorganic film HU as masks. The film PS to be processed is etched using the second inorganic film HD as a mask. COPYRIGHT: (C)2010,JPO&INPIT