| 发明名称 |
Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal |
| 摘要 |
It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.
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| 申请公布号 |
US2009293805(A1) |
申请公布日期 |
2009.12.03 |
| 申请号 |
US20090462429 |
申请日期 |
2009.08.03 |
| 申请人 |
NGK INSULATORS, LTD.;OSAKA UNIVERSITY;TOYODA GOSEI CO., LTD. |
发明人 |
IWAI MAKOTO;SHIMODAIRA TAKANAO;YAMAMURA YOSHIHIKO;SASAKI TAKATOMO;MORI YUSUKE;KAWAMURA FUMIO;YAMASAKI SHIRO |
| 分类号 |
C30B9/12;C01B21/06 |
主分类号 |
C30B9/12 |
| 代理机构 |
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