发明名称 PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR
摘要 A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
申请公布号 US2009294061(A1) 申请公布日期 2009.12.03
申请号 US20080128926 申请日期 2008.05.29
申请人 APPLIED MATERIALS, INC. 发明人 SHANNON STEVEN C.;RAMASWAMY KARTIK;HOFFMAN DANIEL J.;MILLER MATTHEW L.;COLLINS KENNETH S.
分类号 C23C16/44;C23F1/00 主分类号 C23C16/44
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