发明名称 |
PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR |
摘要 |
A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
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申请公布号 |
US2009294061(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20080128926 |
申请日期 |
2008.05.29 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SHANNON STEVEN C.;RAMASWAMY KARTIK;HOFFMAN DANIEL J.;MILLER MATTHEW L.;COLLINS KENNETH S. |
分类号 |
C23C16/44;C23F1/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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