| 摘要 |
Provided is a semiconductor device having a wiring layer formed of damascene wiring. The semiconductor device includes: a first wiring having a width equal to or larger than 0.5 mum; a second wiring adjacent to the first wiring and arranged with a space less than 0.5 mum from the first wiring; and a third wiring adjacent to the second wiring and arranged with a space equal to or smaller than 0.5 mum from the first wiring. In the semiconductor device, the second wiring and the third wiring are structured to have the same electric potential. |
