METHODS AND APPARATUS FOR DEPOSITION REACTORS

摘要

The invention relates to a method and an apparatus in which precursor vapor (101) is guided along at least one in-feed line (141,142) into a reaction chamber (110) of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates (170) by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates (170).