METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a structure with an n-type semiconductor layer and a p-type semiconductor layer adjacent without etching the p-type nitride semiconductor region with the crystal grown.

SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming a groove 17 by etching part of the surface of the n-type semiconductor layer 22; forming the p-type nitride semiconductor layer with the p-type nitride semiconductor layer 16 crystal-grown on the surface of the n-type semiconductor layer 22 extending inside and outside the groove 17; and n-type region step of forming the n-type region 10 reaching from the surface of the p-type nitride semiconductor layer 16 to the n-type semiconductor layer 22 by injecting an n-type impurity to at least part of the p-type nitride semiconductor layer 16 positioning at an upper part of the n-type semiconductor layer 22 in the area without etched in the step of forming the groove.

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