| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive resist material that has a high resolution and is soluble in a solvent, having preferable working environmental properties, thereby enabling development using the solvent with the preferable working environmental properties, and to provide an exposure method and a microfabrication method that uses the material. <P>SOLUTION: The resist contains any one from among tetrachloromethyl tetramethoxycalix [4] arene or trichloromethyl tetramethoxycalix [4] arene. The resist including such a component is soluble in the solvent with the preferable working environment property, that is, an ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate, 2-heptanone, or the like. Development is made possible, by using a tetramethylammonium hydroxide in addition to these solvents. Super-high resolution of 8 nm is obtained, by exposing this resist with electron beams, thereby enabling microfabrication of various materials by using the resist as a mask. <P>COPYRIGHT: (C)2010,JPO&INPIT |
